A review of studies of O-related defects in Ge-doped Czochralski material was presented. The formation of O precipitates during Czochralski Si growth could be improved by germanium, and the oxygen precipitation during thermal cycles could be enhanced, so that the internal gettering ability of Ge-doped Czochralski Si wafers for metallic impurities was improved. Meanwhile, the morphology of oxygen precipitates could be changed in Ge-doped Czochralski silicon. Thermal donors could be suppressed by Ge doping as the result of the reaction between Ge and point defects, while new donors could be strongly enhanced in Ge-doped Czochralski Si because of a process associated with the nucleation enhancement of O precipitates with Ge doping.

Germanium Effect on Oxygen-Related Defects in Czochralski Silicon. D.Yang, J.Chen, H.Li, X.Ma, D.Tian, L.Li, D.Que: Physica Status Solidi A, 2006, 203[4], 685-95