The solid solubility of As in silicon, the ionisation equilibria at different dopant concentrations and temperatures and the algorithms that describe these phenomena were reviewed. Experimental evidence of the occurrence of different types of clusters was presented. The correlation of clustering equilibria with As diffusivity was shown by suitable experiments. Finally, the kinetics of As deactivation - and the influence of excess point defects upon the clustering process - were described.

Features of Arsenic Clusters in Silicon. D.Nobili, S.Solmi: Physica Status Solidi C, 2005, 2[10], 3681-5