The methods of infra-red absorption. Hall effect, and deep-level transient spectroscopy were used to study the complexes that consist of a vacancy and two oxygen atoms (the vacancy-dioxygen complexes, VO2) in irradiated n-Si crystals with various levels of doping. The previously observed bistability of VO2 was confirmed and evidence was provided for electrical activity of this defect in the metastable configuration VO2*. It was established that the defect with this configuration features an acceptor level located at EC − 0.06eV. It was shown that the absorption bands at 967 and 1023/cm were caused by the negatively charged VO2* state, while the bands peaking at 928 and 1004/cm correspond to the neutral charge state of the defect.

Bistability and Electrical Activity of the Vacancy-Dioxygen Complex in Silicon. L.I.Murin, V.P.Markevich, I.F.Medvedeva, L.Dobaczewski: Semiconductors, 2006, 40[11], 1282-6