The n-Si single crystals were studied in order to gain insight into the effect of the temperature of irradiation, Tirr, upon the defect-production process. The samples under study were irradiated with 2MeV electrons in the range Tirr = 20 to 400C. Irradiated crystals were annealed isochronously in the temperature range from 80 to 600C. Measurements were carried out by the Hall method in the temperature range from 77 to 300K. It was shown that the efficiency of introduction of radiation defects with a high thermal stability (Tann ≥ 350C) attained a maximum at Tirr = 150C. The observed effect was accounted for by formation of multivacancy defects PV2 on the basis of ionized E centres and non-equilibrium vacancies.

Effect of Irradiation Temperature on the Efficiency of Introduction of Multivacancy Defects into n-Si Crystals. T.A.Pagava: Semiconductors, 2006, 40[8], 890-2