The coupling between levels related to Si and C vacancies with metal states was considered in the surface molecule approximation. It was shown that the key role of Si vacancies in the formation of a Schottky barrier at the Cr-SiC interface was due to the high density of states at the antibonding level.

On the Effect of Vacancies in the Silicon and Carbon Sub-Lattices on the Formation of a Schottky Barrier at the Metal/SiC Interface. S.Y.Davydov, O.V.Posrednik: Semiconductors, 2006, 40[3], 299-301