The formation and annealing of quench-induced defects in Czochralski Si were studied using IR spectroscopy and Hall effect measurements. The results demonstrated that the behavior of quench-induced defects in Si:Al differed markedly from that in Si doped with other group-III acceptor impurities: B, Ga, and In. The elastic fields created in Si by the Ga and In dopants, as well as by the isovalent impurity Sn, increased the density and annealing temperature of quench-induced defects. The highest density of quench-induced defects in Si:Al was observed at 1100C.

Quench-Induced Defects in Silicon Doped with Group-III Acceptor Impurities - Generation and Annealing. D.I.Brinkevich, V.S.Prosolovich: Inorganic Materials, 2006, 42[9], 933-6