The results of a study of stacking faults and dislocation loops in samples from Czochralski grown Si crystal were reported. High resolution X-ray diffraction was used to measure the reciprocal space maps of intensity distribution from the scattering on defects in Si wafers after annealing processes. The displacement field around stacking faults and dislocation loops was calculated using the Burgers theory of elasticity. From these calculations a reciprocal space map of X-ray diffuse scattered intensity was simulated. The type and size of the defects could be determined from a comparison of measured with simulated maps. The type of defects was determined from the symmetry of measured reciprocal space maps, where higher intensity streaks corresponding to planar defects in {111} planes were observed. Using the width of these higher intensity streaks and comparing measured and simulated maps, the radius of stacking faults with the Burgers vector a/3[111] in {111} planes was found to be 0.3–0.5µm.

X-Ray Diffuse Scattering from Stacking Faults in Czochralski Silicon. P.Klang, V.Holý: Semiconductor Science and Technology, 2006, 21, 352-7