Strain relaxation of the epitaxial SiGe layer and Ge diffusion during nickel silicidation by rapid thermal annealing the structure of Ni(≈14nm)/cap-Si(≈26nm)/Si0.83Ge0.17/Si(001) at the elevated annealing temperatures, TA, were investigated by X-ray diffraction analyses of high-resolution ω–2θ scan and reciprocal space mapping. The analyses showed a much larger strain relaxation at a lower TA and a reduction in Ge content in the SiGe layer of Ni/SiGe/Si(001) after thermal annealing compared to the case of cap-Si/SiGe/Si(001). The results indicated that the strain relaxation of the SiGe layers in NiSi/SiGe/Si(001) was related to the phenomena of NiSi agglomeration and penetration into the SiGe layer during silicidation at ≥750C. At elevated TA ≥ 750C, Ge diffused into the intact cap-Si area during silicidation. Strain Relaxation of Epitaxial SiGe Layer and Ge Diffusion during Ni Silicidation on Cap-Si/SiGe/Si(001). C.H.Jang, M.R.Sardela, S.H.Kim, Y.J.Song, N.E.Lee: Applied Surface Science, 2006, 252[15], 5326-30