A study was made of the influence of forming-gas annealing (5%H2/95%N2), at 350 to 550C, on the density of electrically active interface states in Si(100)/SiO2/HfO2/TiN gate stacks. Prior to forming gas annealing the distribution of interface states across the energy gap exhibited the electrical signature of the Pb0 dangling bond centre for the H free Si(100)/SiO2 interface. Forming gas annealing at 350 and 400C results in a reduction of the interface state density, with an increase in interface state density for forming gas annealing at 450 to 550C. The effect of the cooling ambient for the forming gas anneal (N2 or H2/N2) was also reported.

Impact of H2/N2 Annealing on Interface Defect Densities in Si(100)/SiO2/HfO2/TiN Gate Stacks. M.Schmidt, M.C.Lemme, H.Kurz, T.Witters, T.Schram, K.Cherkaoui, A.Negara, P.K.Hurley: Microelectronic Engineering, 2005, 80, 70-3