Using deep level transient spectroscopy, a study was made of the energy position and thermal stability of deep levels in N doped 4H–SiC epitaxial layers after 1.2MeV proton implantation and 15MeV electron irradiation. Isochronal annealing was performed at 100 to 1200C, in steps of 50C. The deep-level transient spectroscopy measurements, which were carried out in the temperature range from 120 to 630K after each annealing step, reveal the presence of ten electron traps located in the energy range of 0.45–1.6eV below the conduction band edge (Ec). Of these ten levels, three traps at 0.69, 0.73 and 1.03eV below Ec, respectively, were observed only after proton implantation. Dose dependence and depth profiling studies of these levels were performed. Comparing the experimental data with computer simulations of the implantation and defects profiles, it was suggested that these three new levels, not previously reported in the literature, were H related. In particular, the Ec–0.73eV level displays a very narrow depth distribution, confined within the implantation profile, and it originates most likely from a defect involving only one H atom. Defect Energy Levels in Hydrogen-Implanted and Electron-Irradiated n-Type 4H Silicon Carbide. G.Alfieri, E.V.Monakhov, B.G.Svensson, A.Hallén: Journal of Applied Physics, 2005, 98[11], 113524 (6pp)