Detectors based on modern CVD-grown films were irradiated with 8MeV protons at a fluence of 3 x 1014/cm2. The concentration of primary radiation defects was some 1017/cm3, which was three orders of magnitude higher than the concentration of the initially present uncompensated donors. The resulting deep compensation of SiC enabled measurements of detector parameters in two modes: under reverse and forward bias. The basic parameters of the detectors degraded by no more than a factor of 1.7, compared with the fluence of 1014/cm2. However, there appeared a polarization voltage, which indicated that a space charge was accumulated by radiation defects.

Effect of Extreme Radiation Fluences on Parameters of SiC Nuclear Particle Detectors. A.M.Ivanov, A.A.Lebedev, N.B.Strokan: Semiconductors, 2006, 40[10], 1227-31