Wafers were characterized by means of photoluminescence spectroscopy and mapping. Characteristic PL mapping patterns corresponded to etch-pit patterns originating from dislocations and micropipes. The intensities of the 1.3eV band related to Si vacancies, the 0.9eV band related to vanadium and the 1.1eV band related to undefined UD-1 centers were decreased, increased and increased around dislocations, respectively. It was concluded that the variation of intensity contrast around dislocations could be attributed to difference in the diffusivity between point defects and impurities, and to their interaction with dislocations.

Defect Observation in SiC Wafers by Room-Temperature Photoluminescence Mapping. E.Higashi, M.Tajima, N.Hoshino, T.Hayashi, H.Kinoshita, H.Shiomi, S.Matsumoto: Materials Science in Semiconductor Processing, 2006, 9[1-3], 53-7