A systematic study was made of the evolution and distribution of dislocations in PVT 6H-SiC single crystals grown under different conditions. Using KOH defect etching and optical microscopy, dislocation tracking along the crystal lengths was performed in order to study their evolution and propagation mechanisms based on statistics. In particular, crystal growth experiments with continuously increased temperature during the process time were performed to investigate the role of temperature on dislocation formation and on their annihilation behavior. Dislocation evolution and distribution in this particular PVT growth process was compared to those in the case of a constant process temperature.

Dislocation Evolution and Distribution during Physical Vapor Transport (PVT) Growth of Bulk 6H-SiC Single Crystals. S.A.Sakwe, R.Müller, P.Masri, P.J.Wellmann: Physica Status Solidi C, 2006, 3[3], 562-6