SiC based electronic devices were extremely promising candidates for high power, temperature, and radiation applications. However, a variety of defects created during the substrate and subsequent epitaxial growth persists. Many of these defects were electrically active and adversely affect the electrical characteristics of these devices. Determining which defects were the most damaging, how they were created, their structure, and methods for removing them were four basic steps paramount to the creation of reliable SiC based power devices. Optical beam induced current (OBIC) imaging of various dislocations, stacking faults and defects – together with electroluminescence imaging - revealed the electrical activity and identifying features of the various defects. A strong correlation was established between the features observed via electroluminescence and those seen using OBIC imaging.

Characterization of Defects in the Drift Region of 4H-SiC Pin Diodes via Optical Beam-Induced Current. J.D.Caldwell, R.E.Stahlbush, O.J.Glembocki, K.X.Liu, K.D.Hobart: Journal of Vacuum Science & Technology B, 2006, 24[4], 2178-83