A study was made of stacking fault detection in free-standing cubic-SiC epilayer by the Raman measurements. The epilayer with enhanced stacking faults was heteroepitaxially grown by low pressure chemical vapour deposition on a Si(100) substrate and was released in KOH solution by micromechanical manufacture, on which the Raman measurements were performed in a back scattering geometry. The TO line of the Raman spectra was considerably broadened and distorted. The influence of stacking faults on the intensity profiles of TO mode was studied by comparing the experimental data with simulated results based on the Raman bond polarizability (BP) model in the framework of linear-chain concept. Good agreement with respect to the linewidth and disorder-induced peak shift was found by assuming the mean distance of the stacking faults to be 11Å in the BP model.

Raman Scattering Detection of Stacking Faults in Free-Standing Cubic-SiC Epilayer. X.F.Liu, G.S.Sun, J.M.Li, Y.M.Zhao, J.Y.Li, L.Wang, W.S.Zhao, Y.P.Zeng: Chinese Physics Letters, 2006, 23, 2834-7