It was shown that single stacking-fault 3C inclusions which formed in 4H-SiC p-i-n diodes behaved as electron quantum wells, with a quantum-well energy depth of ~0.25eV below the 4H-SiC conduction band minimum. This was done by measuring Schottky barriers on, and away from, inclusions using ballistic electron emission microscopy. The Schottky barrier on the 4H area ([11▪0] oriented) was essentially the same as the (00▪1) plane studied previously. This indicated that the interface pinning effects upon both crystal faces were almost identical. The ballistic electron emission microscopy current amplitude was very sensitive to sub-surface damage caused by polishing.

Quantum-Well Behavior of Single Stacking Fault 3C Inclusions in 4H-SiC p-i-n Diodes Studied by Ballistic Electron Emission Microscopy. K.B.Park, J.P.Pelz, J.Grim, M.Skowronski: Applied Physics Letters, 2005, 87[23], 232103 (3pp)