The growth of Si1−xGex/Si and Ge on insulator by Ge diffusion and SPE (solid phase epitaxy) was reported. Various annealing conditions were used, and evaluated by X-ray diffraction. Ge diffusion and SPE growth of Ge on Si were observed after annealing at 800C. EDX (electron dispersive X-ray) composition analysis showed that the top 100Å Si1−xGex layer was quite uniform with Ge content variation of less than 2%. transmission electron microscopy (transmission electron microscopy) picture showed no crystal orientation misalignment between the Si and the top Si1−xGex layer. This simple and cost-effective process could be used to make Si1−xGex/Si substrate for high-mobility metal oxide semiconductor field effect transistor application. In addition, Ge on insulator structure was achieved by SPE lateral growth on pre-patterned SiO2.

Ge Diffusion and Solid-Phase Epitaxy Growth to Form Si1−xGex/Si and Ge on Insulator Structure. F.Gao, S.J.Lee, S.Balakumar, A.Du, Y.L.Foo, D.L.Kwong: Thin Solid Films, 2006, 504[1-2], 69-72