The cathodoluminescence spectra of polycrystalline CVD ZnSxSe1−x alloy layers grown with the Zn excess were investigated. The dependence E g(x) was refined taking into account the location of exciton bands at 300K. It was confirmed that the spectra were reconstructed on dissolving oxygen in the lattice under the effect of high pressures and temperatures in the gas-static treatment. The dependence of the self-activated emission on the alloy composition was observed for the accepted conditions of the gas-static treatment. For the compositions close to ZnSe (x<0.5), the self-activated SAL band emerges. In contrast with this, only the short-wavelength shift of the SA band was observed for the compositions close to ZnS (x>0.7), which was also most typical of the compounds themselves. These specific features were interpreted based on the calculations of the equilibrium of intrinsic point defects, which affect the location of the Fermi level under the deviation of ZnSe and ZnS from stoichiometry. The spectral regions, in which the bands of oxygen-containing SA and SAL complexes in the ZnSxSe1-x alloy could be observed, were evaluated. These regions depend on x and the oxygen concentration at the lattice sites. The behavior of exciton bands and infra-red radiation emerging in the Cu (3d9) ions was investigated after the gas-static treatment. It was shown that the variation in the ensemble of intrinsic point defects during the gas-static treatment was determined by an increase in the number of defects with a smaller volume, specifically, the SSe antisite defects. The spectra were interpreted based on the theory of non-overlapping bands, which were induced by the iso-electronic impurity.

Investigation of the Effect of Oxygen on the Cathodoluminescence Spectra and Band Gap of the ZnSxSe1-x Alloy. N.K.Morozova, I.A.Karetnikov, D.A.Mideros, E.M.Gavrishchuk, V.B.Ikonnikov: Semiconductors, 2006, 40[10], 1155-61