The electrical properties of p-ZnSiAs2 irradiated with protons (energy E = 5MeV, dose D ≤ 2 x 1017/cm2) were studied. Experimental data and results of calculations were used to estimate the limiting position of the Fermi level in the band gap of the irradiated material (at the mid-gap Eg/2). The thermal stability of radiation defects at 20 to 610C was analyzed.

Electrical Properties of ZnSiAs2 Irradiated with Protons. V.N.Brudnyĭ, T.V.Vedernikova: Semiconductors, 2007, 41[1], 11-4