Transmission X-ray topography of the Ga-doped ZnTe crystals grown by the double crucible liquid encapsulated pulling (DCP) method was presented. The results showed that dislocation density increases with growth direction from top to bottom. Photoluminescence (PL) intensity of the (A0,X) emission clearly decreases with the growth direction from top to bottom. Therefore, it was concluded that the PL intensity of the (A0, X) peak decreases with increasing dislocation density.

Dislocation of High-Quality Large DCP-ZnTe Substrate Examined by Photoluminescence and X-Ray Topography. K.Yoshino, T.Kakeno, M.Yoneta, I.Yonenaga: Materials Science in Semiconductor Processing, 2006, 9[1-3], 45-8