Depth profiles of Fe in a p-type epitaxial layer on a p+-type substrate were examined by means of deep-level transient spectroscopy and computer simulation. A comparison of the experimental results with the simulations revealed the position of the Fe deep donor level to be 0.42eV from the valence-band edge at 412 to 580C. The Fe donor level was almost temperature-independent. This knowledge was expected to improve the design of Fe-gettering processes.

Temperature Dependence of the Iron Donor Level in Silicon at Device Processing Temperatures H.Kohno, H.Hieslmair, A.A.Istratov, E.R.Weber: Applied Physics Letters, 2000, 76[19], 2734-6