Transmission X-ray topograph was successfully observed in a high quality P-doped ZnTe substrate (100). The dislocation density was estimated to be approximately 7000/cm2. This value was smallest in the ZnTe substrate. Both peak energies in the photoluminescence spectra were the same in the dislocation and no-dislocation areas. However, the intensity of the free-to-acceptor emission in the dislocation area was larger than that in the no-dislocation area. It was found that the majority of the phosphor impurities existed in the dislocation areas.

Dislocation of High-Quality P-Doped ZnTe Substrate Examined by X-Ray Topography. K.Yoshino, T.Kakeno, M.Yoneta, I.Yonenaga: Journal of Materials Science - Materials in Electronics, 2005, 16[7], 445-8