The growth of isotopically enriched epitaxial layers enables the preparation of material heterostructures, highly appropriate for simultaneous self- and dopant-diffusion studies. The advance in solid-state diffusion was demonstrated by experiments on the impact of dopant diffusion and proton irradiation on self-diffusion in silicon. Accurate modelling provided valuable information about the type and charge states of native point defects and the mechanisms of atomic transport. The results were compared with recent theoretical calculations. Consistencies and differences between experiment and theory were highlighted.

Diffusion Mediated by Doping and Radiation-Induced Point Defects. H.Bracht: Physica B, 2006, 376-377, 11-8