Radiation-enhanced super-diffusion in 2-layered structures, comprising an impurity over-layer and a semiconductor substrate, subjected to electron beam irradiation was modelled and visualized using computer graphics animation. The important and experimentally observed large sticking probabilities of impurities at the wafer surface were modelled in the algorithm, and the animation was found to behave as expected under irradiation. Programming of the animation algorithm was performed using an object

modelling technique. The animation generated a continuous display of radiation-enhanced super-diffusion that was qualitatively consistent with experimental observations, thereby facilitating understanding of the super-diffusion process.

Visualization and Modeling of Impurity Atom Migration for Superdiffusion in Semiconductors. T.Wada, K.Kojiguchi, H.Nagao, H.Fujimoto: Physica B, 2006, 376-377, 907-12