The kinetic mechanism of defect formation on a vicinal surface misoriented in 2 directions, in the case of molecular-beam epitaxy, was studied. These defects were two adatoms stuck together in a potential trench near the step edge. The effects of the surface parameters, as well as growth rate on the probability of defect formation were studied. It was shown that an increase in the misorientation angle of the surface was conducive to a drastic decrease in the number of defects during growth.

The Role of One-Dimensional Diffusion in a Growth Model of the Surface of a Kossel’s Crystal. A.M.Boĭko, R.A.Suris: Semiconductors, 2006, 40[3], 367-74