Surface diffusion was one of the most common phenomena during thin-film growth. The microstructure of the thin film depends on the rate of surface diffusion of the adatoms. The effect of an external field upon surface diffusion barriers was shown theoretically by using gallium nitride as an example. It was shown, via density functional calculations, that the desorption energy of surface adsorbed atom and activation barrier for surface diffusion process could be altered by application of external field. Finally, based upon arguments regarding the electronic effect, the origin of the effect of an external field, and its orientation, upon the desorption energy and activation barrier for surface diffusion was analyzed.

Effect of External Field on Bond Energy and Activation Barrier for Surface Diffusion. D.Sengupta: Journal of Crystal Growth, 2006, 286[1], 91-5