An analytic expression was formulated for the electroreflectance (ER) spectrum associated with the valence–donor transition in terms of the non-local description of optical response, a more rigorous approach than the long-wavelength approximation. On the basis of the ER spectrum formula thus obtained, a study was made of the valence–donor ER spectra as a function of distance, D, between the donor and the semiconductor surface to investigate the possibility of employing ER spectroscopy to measure D for a single impurity.

A Design for Electro-Optical Detection of Defect Positions in Semiconductors. M.Sakai, M.Takeuchi: Physica B, 2006, 376-377, 897-900