A mechanism of Ostwald ripening of islands under conditions of dislocation-surface diffusion was suggested for semiconductor heterostructures with quantum dots. The island size distribution was calculated for the suggested growth mechanism. Experimental histograms were compared with calculated curves.

Island Size Distribution under Conditions of Dislocation-Surface Diffusion in Semiconductor Heterostructures. R.D.Vengrenovich, A.V.Moskalyuk, S.V.Yarema: Semiconductors, 2006, 40[3], 270-5