Performing an event-based continuous kinetic Monte Carlo simulation, an investigation was made of the modulated effect induced by the dislocation on the substrate to the growth of semiconductor quantum dots. The relative positions between the quantum dots and the dislocations were studied. The stress effects to the growth of the quantum dots were considered in simulation. The simulation results were compared with the experiment and the agreement between them indicated that this simulation was useful to study the growth mode and the atomic kinetics during the growth of the semiconductor QDs.

Monte Carlo Simulation of the Modulated Effect Induced by the Dislocation to Quantum Dot Growth. C.Zhao, Y.H.Chen, M.Zhao, C.L.Zhang, B.Xu, L.K.Yu, J.Sun, W.Lei, Z.G.Wang: Materials Science in Semiconductor Processing, 2006, 9[1-3], 31-5