Restrictions imposed on the maximum defect concentration at which the conventional assumption of the Shockley-Read-Hall recombination theory (the equality of electron and hole lifetimes) was still applicable were studied. Using the example of doped silicon, the dependence of this concentration on the injection level and various defect parameters was considered. The cases where the semiconductor contained defects of only one type and of several types were investigated. The performed analysis permitted the determination of the sample parameters for which the lifetimes of charge carriers could be calculated using a simplified recombination model.

Applicability of a Simplified Shockley-Read-Hall Model to Semiconductors with Various Types of Defects. A.N.Yashin: Semiconductors, 2005, 39[11], 1285-9