A global approach was presented permitting accurate simulation of the process of ultra-shallow junctions. Physically based models of dopant implantation (BCA) and diffusion (including point and extended defects coupling) were integrated within a unique simulation tool. A useful set of the relevant parameters was obtained through an original calibration methodology. It was shown that this approach provided an efficient tool for process modelling.

A Comprehensive Solution for Simulating Ultra-Shallow Junctions - from High-Dose/Low-Energy Implant to Diffusion Annealing. F.Boucard, F.Roger, I.Chakarov, V.Zhuk, M.Temkin, X.Montagner, E.Guichard, D.Mathiot: Materials Science and Engineering B, 2005, 124-125, 409-14