A new model of irradiation-induced disordering of semiconductors was proposed. According to this model, the disordered regions capable of self-annealing were stabilized by self-localized electronic excitations (electrons, holes, excitons). Pulsed annealing of these regions occurred through recombination of the electronic stoppers and dispersal of disordered regions thus takes place. This model agrees well with the experiments on amorphization and laser pulse annealing.

Electronic Theory of Irradiation-Induced Disordering and Annealing in Semiconductors. A.T.Mamadalimov, B.L.Oksengendler, N.N.Turaeva: Russian Physics Journal, 2006, 49[4], 420-6