Symmetric <110>-type Al grain boundaries were experimentally and theoretically investigated. It was demonstrated that Ga segregation could be understood by incorporating the anisotropy of the relaxed grain boundary volumes. The feasibility of Ga film formation was illustrated by applying a continuum model.

Bridging Grain Boundary Volume to Segregation at Symmetric Grain Boundaries. J.Moon, G.Richter, W.Sigle, M.Rühle: Materials Science and Engineering A, 2007, 448[1-2], 299-302