A comprehensive model was presented for the nucleation, growth and dissolution of B clusters. The activation of B in implanted material was analyzed in terms of the detailed interactions between B and defects. According to the model, the nucleation of B clusters required a high interstitial supersaturation. This occurred in the damaged region during implantation, and in the early stages of post-implantation annealing. The B clusters grew by adding interstitial B to pre-existing B clusters. This resulted in B complexes with a high interstitial content. As annealing was continued, and the Si interstitial supersaturation decreased, the B clusters emitted Si interstitials; leaving small stable B complexes with a low interstitial content. The total dissolution of B clusters involved thermally generated Si interstitials, and it was only possible at very high temperatures or after long annealing times.

B Cluster Formation and Dissolution in Si - a Scenario based on Atomistic Modelling L.Pelaz, G.H.Gilmer, H.J.Gossmann, C.S.Rafferty, M.Jaraíz, J.Barbolla: Applied Physics Letters, 1999, 74[24], 3657-9