Wafers with background As concentrations ranging from 1017 to 3 x 1019/cm3 were implanted with Si ions in order to study the interaction between As atoms and excess self-interstitials. The samples were then annealed (750C, 0.25 to 1h) so as to nucleate and dissolve {311} defects. The concentrations of trapped interstitials in these defects were measured by using quantitative plan-view transmission electron microscopy. It was shown that, as the As concentration was increased, there was a reduction in the number and size of {311} defects. This decrease was believed to be the result of interstitial trapping by the As. During annealing, the trapped interstitial concentration in the {311} defects decreased as the defects dissolved. The time constant of the dissolution process was calculated to be about 0.55h at 750C, and this was independent of the background concentration. This suggested that the As atoms trapped some of the interstitials, and that these traps were sufficiently stable to avoid affecting subsequent {311} dissolution at 750C.

Effect of Arsenic Doping on {311} Defect Dissolution in Silicon R.Brindos, P.Keys, K.S.Jones, M.E.Law: Applied Physics Letters, 1999, 75[2], 229-31