Photo-excitation during low-fluence implantation with MeV Si and Ge ions suppressed vacancy-type point-defect formation, as judged by using in situ deep-level transient spectroscopy. The formation of A-centres, after low-temperature implantation, extended over a wide temperature interval. This indicated that electrically inactive clusters, which emitted vacancies during annealing, were formed in the end-of-range region during implantation at 85K. The numbers of vacancies which were stored in these clusters were influenced by low-temperature in situ photo-excitation.

The Impact of in situ Photo-Excitation on the Formation of Vacancy-Type Complexes in Silicon Implanted at 85 and 295K N.Yarykin, C.R.Cho, G.A.Rozgonyi, R.A.Zuhr: Applied Physics Letters, 1999, 75[2], 241-3