The instability observed in Cu∕Cu(100) epitaxial growth by Ernst et alia was studied using serial kinetic Monte Carlo simulations as well as a newly proposed algorithm for the parallel kinetic Monte Carlo method. The parallel algorithm permitted the simulation of longer time-scales which were not easily accessible by using a serial Monte Carlo simulation. Two different sets of activation barriers were used—one based upon effective medium theory and another based upon the embedded-atom method. In both cases, it was found that the existence of very fast edge diffusion along close-packed step edges, together with a slight enhancement of the rate of corner diffusion, was essential in order to explain the experimental results.

Growth Instability in Cu Multilayer Films due to Fast Edge/Corner Diffusion. Y.Shim, J.G.Amar: Physical Review B, 2006, 73[3], 035423 (8pp)