The effect of the constant magnetic field-induced generation of O-vacancy defects in Czochralski-type crystals was detected for the first time. A qualitative theory for the effect assumed that it arose from excitation of the Si-O bond of interstitial O. It was valid for both constant and pulsed magnetic fields. Experimental verification of the theory in combined, constant and pulsed, fields strongly confirmed it.

Magnetic-Field Induced Generation of A-Like Centers in Cz-Si Crystals M.N.Levin, B.A.Zon: Physics Letters A, 1999, 260[5], 386-90