A model for floating-bond mediated dangling-bond creation assumed that metastable dangling bonds were created by the creation of a dangling bond and a floating bond by bond switching, their pair annihilation and interconversion between the dangling bond and the floating-bond. This model could successfully explain a wide variety of metastable dangling-bond creation processes. In the present model, the presence of H was not explicitly taken into account. Therefore, photo-created dangling bonds which were separated from H atoms, in accord with the results of pulsed electron spin resonance and other experimental data, could be easily explained. The presence of H was expected to increase the coefficients in the rate equation for the above interconversion. The present model could also make the observed temperature dependence, of the defect density created by quenching, consistent with the observed annealing behaviour of various metastable defects.

Rate Equations for the Creation of Various Metastable Dangling Bonds in a-Si:H Mediated by Floating Bonds T.Shimizu, M.Kumeda: Japanese Journal of Applied Physics - 2, 1999, 38[8B], L911-3