Transient enhanced diffusion in the presence of end-of-range defects, produced by amorphizing implantation, was simulated. Account was taken of the Ostwald ripening of end-of-range defects. This reduced the efficiency of the defects as a source of self-interstitials. A formula was derived which described this reduction in efficiency as a function of time, and the formula was used in the simulation. The formula indicated that the influence of Ostwald ripening was significant for annealing times longer than about 10 or 1s at 1000 and 1050C, respectively. The final simulation satisfactorily predicted transient enhanced diffusion under annealing conditions where the effect of Ostwald ripening was significant.

Influence of Ostwald Ripening of End-of-Range Defects on Transient Enhanced Diffusion in Silicon M.Uematsu: Japanese Journal of Applied Physics - 2, 1999, 38[11A], L1213-5