The behaviour of O precipitation was investigated in the radial direction by using wafers having differing generation areas of vacancy-related defects. The O precipitation was more enhanced in vacancy-rich regions than in interstitial-rich regions. The behaviour of O precipitation in the radial direction was strongly dependent upon the size of the vacancy-rich regions; which was related to the crystal growth conditions. Anomalous O precipitation occurred in the marginal vacancy-rich region, and the inner edge of the interstitial-rich region. The O precipitation was suppressed almost to zero in marginal interstitial-rich regions.

Anomalous Oxygen Precipitation Near the Vacancy and Interstitial Boundary in CZ-Si Wafers D.H.Hwang, B.Y.Lee, H.D.Yoo, O.J.Kwon: Journal of Crystal Growth, 2000, 213[1-2], 57-62