It was noted that, in Czochralski-type crystals, the position of the interstitial/vacancy boundary was controlled mainly by the crystal pulling-rate and the axial temperature gradient. However, neither high- nor low-frequency fluctuations in pulling rate greatly altered the boundary position. This was attributed to a time-delay phenomenon in crystal growth.

Effects of Pulling Rate Fluctuation on the Interstitial-Vacancy Boundary Formation in CZ-Si Single Crystal B.M.Park, G.H.Seo, G.Kim: Journal of Crystal Growth, 1999, 203[1-2], 67-74