A model for multi-step vacancy aggregation in dislocation-free crystals was analyzed. In this model, voids normally nucleated first at just below 1100C. The vacancy loss to voids was retarded below some characteristic temperature (about 1020C) as the vacancies became bound into O2V complexes. The remaining vacancies controlled the nucleation of oxide particles during further cooling. Some vacancies survived this stage as well, and controlled the nucleation of O clusters at about 700C. The micro-defect properties and the residual vacancy concentration were calculated as a function of the initial vacancy concentration.

Grown-in Microdefects, Residual Vacancies and Oxygen Precipitation Bands in Czochralski Silicon V.V.Voronkov, R.Falster: Journal of Crystal Growth, 1999, 204[4], 462-74