From an analysis of dopant diffusion and oxidation stacking faults, the thermal equilibrium concentrations and diffusivities of self-interstitials and vacancies were obtained as functions of the absolute temperature. It was found that the concentration of interstitials was lower than that of vacancies at a given temperature, and that the interstitial diffusivity was greater than that of vacancies at temperatures greater than 792K. It was also noted that there was no inconsistency between the above concentration relationship and the fact that the swirl A defect was formed from interstitial-type agglomerations.

Intrinsic Point Defects and Grown-in Defects in Silicon T.Okino: Solid State Phenomena, 2000, 71, 1-22