The mechanisms of O transport during the preparation of buried oxide layers were reviewed. Various effects which were caused by the interaction of weakly-bonded O with mobile point defects and static defect complexes were analyzed. Particular attention was paid to C-induced gettering. Secondary ion mass spectrometry profiling, together with the results of computer simulations, revealed a rather complicated autocatalytic behaviour of C, and an important role of C-vacancy and C-O complexes in O accumulation.

Computer Simulation of Gettering Induced Oxygen Redistribution in SOI Structures V.G.Litovchenko, A.A.Efremov, C.Claeys: Solid State Phenomena, 1999, 69-70, 273-8