Specimens of N-doped Czochralski material with grown-in N-O complexes and shallow thermal donors were annealed at 450 to 1150C for various times. It was found that, during annealing, the absorption intensity of the shallow thermal donors and N-O complexes increased or decreased according to their elimination or formation. It was concluded that both defects originated from the same source, and that the shallow thermal donors were related to the N-O complexes.

Shallower Thermal Donor and Nitrogen-Oxygen Complex in Nitrogen Doped Czochralski Silicon D.Yang, J.Zhang, L.Li, D.Que: Solid State Phenomena, 1999, 69-70, 197-202