It was shown that the detailed atomic structures of vacancy-impurity complexes could be experimentally determined by combining positron lifetime and electron momentum distribution measurements. Vacancies which were complexed with a single impurity, V-P and V-As, were identified in electron-irradiated material. The formation of native vacancy defects was observed in highly As-doped material, at a doping level of 1020/cm3. The defects were identified as being monovacancies which were surrounded by three As atoms. The formation of the V-As3 complex was consistent with theoretical descriptions of As diffusion and electrical deactivation in highly As-doped samples.

The Structure of Vacancy-Impurity Complexes in Highly n-Type Si K.Saarinen, J.Nissilá, H.Kauppinen, M.Hakala, M.J.Puska, P.Hautojärvi, C.Corbel: Physica B, 1999, 273-274, 463-7