Deuterium-induced defects in polycrystalline W were studied. The D was implanted into samples and the retained D-concentrations were analyzed using nuclear reaction analysis and secondary ion mass spectrometry. Four different defect types were observed that trapped D with release temperatures of 455, 560, 663 and 801K. The total number of each defect type produced by 5.8 x 1016/cm2 30keV D implantation at room temperature was obtained to be 0.260, 0.156, 0.082 and 0.056traps/cm2/implanted D atom.

Quantification of Deuterium Irradiation Induced Defect Concentrations in Tungsten. T.Ahlgren, K.Heinola, E.Vainonen-Ahlgren, J.Likonen, J.Keinonen: Nuclear Instruments and Methods in Physics Research B, 2006, 249[1-2], 436-9