Deuterium retention in the implantation-induced defects in polycrystalline W was studied. The D was implanted with different energies and concentrations of retained D were analyzed with secondary ion mass spectrometry and nuclear reaction analysis. Annealing was carried out at 4 pre-determined temperatures corresponding to 4 different defect types that could trap D. A quantitative number of each defect type produced by 5, 15 and 30keV D implantation with a dose of 5.8 x 1016/cm2 was obtained.

Deuterium Irradiation-Induced Defect Concentrations in Tungsten. K.Heinola, T.Ahlgren, E.Vainonen-Ahlgren, J.Likonen, J.Keinonen: Physica Scripta, 2007, T128, 91-5