A new model was proposed to evaluate the chemical driving force for diffusion-induced recrystallization or diffusion-induced grain boundary migration in the A(B) system, where elements A and B were non-volatile at solid-state reaction temperatures. The experimental results for diffusion-induced recrystallization in the Ag(Sn) and Cu(Ni) systems in previous studies were numerically analyzed using the new model. The analyses indicated that a region with discontinuously different composition was formed by diffusion-induced recrystallization in the early stages of the reaction with the maximum driving force.

Chemical Driving Force for Diffusion-Induced Recrystallization or Diffusion-Induced Grain Boundary Migration in a Binary System Consisting of Non-Volatile Elements. M.Kajihara: Scripta Materialia, 2006, 54[10], 1767-72